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Infineon | IPP50R190CEXKSA1

Manufacturer Part #

IPP50R190CEXKSA1

Single N-Channel 500 V 0.19 Ohm 47.2 nC CoolMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP50R190CEXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 127W
Qg Gate Charge: 47.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 24.8A
Turn-on Delay Time: 9.5ns
Turn-off Delay Time: 54ns
Rise Time: 8.5ns
Fall Time: 7.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 1137pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$437.50
USD
Quantity
Unit Price
1
$0.925
40
$0.90
200
$0.875
750
$0.85
3,000+
$0.805
Product Variant Information section