text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPP60R160P6XKSA1

Infineon | IPP60R160P6XKSA1

Manufacturer Part #

IPP60R160P6XKSA1

Single N-Channel 600 V 160 mOhm 44 nC CoolMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP60R160P6XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 160mΩ
Rated Power Dissipation: 176W
Qg Gate Charge: 44nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 23.8A
Turn-on Delay Time: 12.5ns
Turn-off Delay Time: 40ns
Rise Time: 7.6ns
Fall Time: 5.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Technology: Si
Height - Max: 9.45mm
Length: 10.36mm
Input Capacitance: 2080pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$620.00
USD
Quantity
Unit Price
500
$1.24
1,000
$1.23
2,000
$1.22
7,500+
$1.20
Product Variant Information section