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Infineon | IPP60R299CPXKSA1

Manufacturer Part #

IPP60R299CPXKSA1

IPP60R299CP Series 600 V 11 A 299 mOhm 96 W 22 nC N-Channel MOSFET - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP60R299CPXKSA1 - Technical Attributes
Attributes Table
Product Status: Not Recommended for New Designs
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 299mΩ
Rated Power Dissipation: 96W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 11A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 40ns
Rise Time: 5ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 1100pF
Series: CoolMOS CP
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$595.00
USD
Quantity
Unit Price
50
$1.19
1,000
$1.18
2,000
$1.17
7,500+
$1.15
Product Variant Information section