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Infineon | IPP65R190CFD7XKSA1

Manufacturer Part #

IPP65R190CFD7XKSA1

650V, 12A, 190MOhms, N-Channel, TO-220-3, MOSFET

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP65R190CFD7XKSA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 63W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 80ns
Rise Time: 13ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 1044pF
Series: CoolMOS CFD7
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
500
Multiple Of:
500
Total
$570.00
USD
Quantity
Unit Price
500
$1.14
1,000
$1.13
2,000
$1.12
7,500+
$1.10
Product Variant Information section