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Infineon | IPT023N10NM5LF2ATMA1

Manufacturer Part #

IPT023N10NM5LF2ATMA1

100 V 27 A 3.8 W Surface Mount N-Channel OptiMOS™ 5 Linear FET - PG-HSOF-8-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2432
Product Specification Section
Infineon IPT023N10NM5LF2ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 2.1mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 144nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 27A
Operating Temp Range: -55°C to +175°C
Input Capacitance: 12000pF
Package Style:  PG-HSOF-8-1
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,000
USA:
2,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$3,720.00
USD
Quantity
Unit Price
2,000+
$1.86
Product Variant Information section