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Manufacturer Part #
IPW60R017C7XKSA1
Single N-Channel 600 V 17 mOhm 240 nC CoolMOS™ Power Mosfet - TO-247-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Infineon IPW60R017C7XKSA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Introduction of an additional assembly and test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) for TO247-3 products.Detailed change information:Subject:Introduction of an additional assembly and final test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) forTO247-3 products.Reason :Expansion of assembly and test location to assure continuity and increase of supply
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPW60R017C7XKSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/ipw60r017c7xksa1-infineon-4173861
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPW60R017C7XKSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/ipw60r017c7xksa1-infineon-4173861
Infineon IPW60R017C7XKSA1 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 17mΩ |
| Rated Power Dissipation: | 446W |
| Qg Gate Charge: | 50nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 109A |
| Turn-on Delay Time: | 30ns |
| Turn-off Delay Time: | 106ns |
| Rise Time: | 25ns |
| Fall Time: | 4ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.5V |
| Technology: | CoolMOS |
| Input Capacitance: | 9890pF |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
30 per Tube
Mounting Method:
Through Hole