Manufacturer Part #
IRF5210STRLPBF
Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2530 | ||||||||||
Infineon IRF5210STRLPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Detailed change information:Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason :The wafer production of the affected products will be transferred to Infineon Technologies Kulim, according to global Infineon production strategy.
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=Asia&field16=en&field2=IRF5210STRLPBF&field4=Infineon&field18=https://p1apac.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf5210strlpbf-infineon-5175360
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=Asia&field16=en&field2=IRF5210STRLPBF&field4=Infineon&field18=https://p1apac.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf5210strlpbf-infineon-5175360
Infineon IRF5210STRLPBF - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.06Ω |
| Rated Power Dissipation: | 200|W |
| Qg Gate Charge: | 180nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount