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Infineon | IRF6623TRPBF

Manufacturer Part #

IRF6623TRPBF

Single N-Channel 20 V 9.7 mOhm 17 nC HEXFET® Power Mosfet - DirectFET®

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF6623TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 9.7mΩ
Rated Power Dissipation: 1.4W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 16A
Turn-on Delay Time: 9.7ns
Turn-off Delay Time: 12ns
Rise Time: 40ns
Fall Time: 4.5ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 2.2V
Technology: Si
Height - Max: 0.676mm
Length: 4.85mm
Input Capacitance: 1360pF
Package Style:  DIRECTFET
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
4800
Multiple Of:
4800
Total
$5,040.00
USD
Quantity
Unit Price
4,800+
$1.05
Product Variant Information section