text.skipToContent text.skipToNavigation

Manufacturer Part #

IRF6644TRPBF

Single N-Channel 100 V 13 mOhm 47 nC HEXFET® Power Mosfet - DirectFET®

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2241
Product Specification Section
Infineon IRF6644TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 13mΩ
Rated Power Dissipation: 2.8W
Qg Gate Charge: 47nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 60A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 34ns
Rise Time: 26ns
Fall Time: 16ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 4.8V
Technology: Si
Height - Max: 0.676mm
Length: 6.35mm
Input Capacitance: 2210pF
Package Style:  DIRECTFET
Mounting Method: Surface Mount
Pricing Section
Global Stock:
38,400
USA:
38,400
14,400
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4800
Multiple Of:
4800
Total
$4,992.00
USD
Quantity
Unit Price
4,800+
$1.04
Product Variant Information section