text.skipToContent text.skipToNavigation

Manufacturer Part #

IRF6775MTRPBF

Single N-Channel 150 V 47 mOhm 25 nC HEXFET® Power Mosfet - DirectFET®

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IRF6775MTRPBF - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 56mΩ
Rated Power Dissipation: 2.8W
Qg Gate Charge: 36nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4.9A
Turn-on Delay Time: 5.9ns
Turn-off Delay Time: 5.8ns
Rise Time: 7.8s
Fall Time: 15ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 1411pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4800
Multiple Of:
4800
Total
$3,768.00
USD
Quantity
Unit Price
4,800+
$0.785