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Infineon | IRF7341TRPBFXTMA1

Manufacturer Part #

IRF7341TRPBFXTMA1

IRF73 Series 55V 4.7A 2W SMD Dual N-Channel MOSFET SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2435
Product Specification Section
Infineon IRF7341TRPBFXTMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 50mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 36nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4.7A
Turn-on Delay Time: 8.3ns
Turn-off Delay Time: 32ns
Rise Time: 3.2ns
Fall Time: 13ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Input Capacitance: 740pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
152,000
USA:
152,000
On Order:Order inventroy details
500,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$920.00
USD
Quantity
Unit Price
4,000
$0.23
12,000
$0.225
20,000+
$0.22
Product Variant Information section