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Manufacturer Part #

IRF7389TRPBF

Dual N/P-Channel 30 V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IRF7389TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 30V/-30V
Drain-Source On Resistance-Max: 0.029Ω/0.058Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 22nC/23nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
4000
Multiple Of:
4000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,500.00
USD
Quantity
Unit Price
4,000
$0.375
12,000
$0.37
20,000+
$0.365