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Infineon | IRF7779L2TRPBF

Manufacturer Part #

IRF7779L2TRPBF

Single N-Channel 150 V 11 mOhm 97 nC HEXFET® Power Mosfet - DirectFET®

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2326
Product Specification Section
Infineon IRF7779L2TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 11mΩ
Rated Power Dissipation: 3.3W
Qg Gate Charge: 97nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 11A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 36ns
Rise Time: 19ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Input Capacitance: 6660pF
Package Style:  DIRECTFET
Mounting Method: Surface Mount
Pricing Section
Global Stock:
4,000
USA:
4,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$11,000.00
USD
Quantity
Unit Price
4,000+
$2.75
Product Variant Information section