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Manufacturer Part #

IRF9317TRPBF

Single P-Channel 30 V 10.2 mOhm 31 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2332
Product Specification Section
Infineon IRF9317TRPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -30V
Drain-Source On Resistance-Max: 10.2mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 31nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: -16A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 160ns
Rise Time: 64ns
Fall Time: 120ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -2.4V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 2820pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The IRF9317TRPBF is a P-Channel 30 V 2.5 W 31 nC Hexfet Power Mosfet. Operating temperature ranges from -55°C to 150°C and available in Surface Mount SOIC-8 Package.

Features:

  • Industry-Standard SO8 Package
  • Multi-Vendor Compatibility
  • RoHS Compliant Containing no Lead, no Bromide and no Halogen                                             
  • Environmentally Friendlier

Applications:

  • Charge and Discharge switch for Notebook PC Battery Application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
4000
Multiple Of:
4000
Total
$1,220.00
USD
Quantity
Unit Price
4,000
$0.305
8,000
$0.30
12,000
$0.295
20,000+
$0.29
Product Variant Information section