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Référence fabricant
IRFB4127PBF
Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole | ||||||||||
| Code de date: | 2426 | ||||||||||
Infineon IRFB4127PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFB4127PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfb4127pbf-infineon-1173870
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFB4127PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfb4127pbf-infineon-1173870
Infineon IRFB4127PBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 20mΩ |
| Rated Power Dissipation: | 375W |
| Qg Gate Charge: | 150nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 76A |
| Turn-on Delay Time: | 17ns |
| Turn-off Delay Time: | 56ns |
| Rise Time: | 18ns |
| Fall Time: | 22ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 5V |
| Technology: | Si |
| Height - Max: | 9.02mm |
| Length: | 10.67mm |
| Input Capacitance: | 5380pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The IRFB4127PbF features TrenchFET Gen 6 Technology. This 200Volt, 76Amp N-channel device in the TO-220 package, features maximum on-resistance of 20 milliohms at a 10-V gate drive voltage. Specifically designed for applications such as:
- Power supplies
- High power DC motors
- Inverters
- Power tools
Features and benefits include:
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
- Lead-free, RoHS Compliant
- Qualified to industrial grade and MSL1
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole