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Manufacturer Part #

IRFB4510PBF

Single N-Channel 100 V 13.5 mOhm 58 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2342
Product Specification Section
Infineon IRFB4510PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 13.5mΩ
Rated Power Dissipation: 140|W
Qg Gate Charge: 58nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$640.00
USD
Quantity
Unit Price
50
$0.68
250
$0.66
1,000
$0.64
2,500
$0.63
6,250+
$0.61
Product Variant Information section