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Référence fabricant
IRFI540NPBF
Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-220-3FP
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) | ||||||||||
| Code de date: | 2435 | ||||||||||
Infineon IRFI540NPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFI540NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfi540npbf-infineon-1173868
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFI540NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfi540npbf-infineon-1173868
Infineon IRFI540NPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.052Ω |
| Rated Power Dissipation: | 54W |
| Qg Gate Charge: | 94nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 20A |
| Turn-on Delay Time: | 8.2ns |
| Turn-off Delay Time: | 44ns |
| Rise Time: | 39ns |
| Fall Time: | 33ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 9.8mm |
| Length: | 10.63mm |
| Input Capacitance: | 1400pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
Fonctionnalités et applications
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolations is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
Features
Advanced Process Technology
Isolated Package
High Voltage Isolation – 2.5KVRMS5
Sink to Lead Creepage Dist. – 4. 8mm
Fully Avalanche Rated
Lead-Free
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)