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Infineon | IRFP4368PBFXKMA1

Manufacturer Part #

IRFP4368PBFXKMA1

N-Channel 75 V195 A 520 W Through Hole Metal Oxide Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2520
Product Specification Section
Infineon IRFP4368PBFXKMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 1.85mΩ
Rated Power Dissipation: 520W
Qg Gate Charge: 570nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 195A
Turn-on Delay Time: 43ns
Turn-off Delay Time: 170ns
Rise Time: 220ns
Fall Time: 260ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 19230pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
16,096
USA:
16,096
On Order:Order inventroy details
71,200
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
25
Multiple Of:
25
Total
$66.50
USD
Quantity
Unit Price
25
$2.66
100
$2.62
375
$2.58
1,000
$2.56
2,500+
$2.51
Product Variant Information section