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Manufacturer Part #

IRFR3710ZTRPBF

Single N-Channel 100 V 18 mOhm 100 nC HEXFET® Power Mosfet - TO-252AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFR3710ZTRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 140W
Qg Gate Charge: 100nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 56A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 53ns
Rise Time: 43ns
Fall Time: 42ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 2930pF
Package Style:  TO-252AA
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$1,350.00
USD
Quantity
Unit Price
2,000
$0.675
4,000
$0.67
6,000
$0.665
8,000
$0.66
10,000+
$0.65
Product Variant Information section