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Référence fabricant
IRFR5305TRPBF
Single P-Channel 55V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2000 par Reel Style d'emballage :TO-252AA Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2352 | ||||||||||
Infineon IRFR5305TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
- Updated information marked in BLUE TYPE- Original PCN N? 2023-092-A dated 2023-01-15 (new: 2024-01-15) Product identification Traceability is assured via Wafer lot number & country of diffusion Country of diffusion: ? United States = Infineon Technologies Temecula? Taiwan = EPISIL Technologies Inc.? Malaysia = Infineon Technologies Kulim
Detailed change information:Subject: Change of the wafer production location from Infineon Technologies Temecula, USA to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason:The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFR5305TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfr5305trpbf-infineon-3173892
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFR5305TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfr5305trpbf-infineon-3173892
Infineon IRFR5305TRPBF - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.065Ω |
| Rated Power Dissipation: | 110|W |
| Qg Gate Charge: | 63nC |
| Style d'emballage : | TO-252AA |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The IRFR5305TRPBF is a Fifth Generation HEXFET from International Rectifier that utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. For more information, please see the datasheet above.
The IRFR5305TRPBF comes in a D-Pak package. These come in Tape and Reel as indicated by the TR, and are lead free as indicated by the PBF.Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
TO-252AA
Méthode de montage :
Surface Mount