text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRFS3607TRLPBF

Infineon | IRFS3607TRLPBF

Manufacturer Part #

IRFS3607TRLPBF

Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFS3607TRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 9mΩ
Rated Power Dissipation: 140W
Qg Gate Charge: 84nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 43ns
Rise Time: 110ns
Fall Time: 96ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 3070pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
3200
Multiple Of:
800
Total
$2,016.00
USD
Quantity
Unit Price
800
$0.645
1,600
$0.635
3,200
$0.63
4,000
$0.625
12,000+
$0.61
Product Variant Information section