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Infineon | IRFSL5615PBF

Manufacturer Part #

IRFSL5615PBF

Single N-Channel 150 V 42 mOhm 40 nC HEXFET® Power Mosfet - TO-262

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFSL5615PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 42mΩ
Rated Power Dissipation: 144W
Qg Gate Charge: 40nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 33A
Turn-on Delay Time: 8.9ns
Turn-off Delay Time: 17.2ns
Rise Time: 23.1ns
Fall Time: 13.1ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 1750pF
Package Style:  TO-262 (I2PAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1000
Multiple Of:
50
Total
$980.00
USD
Quantity
Unit Price
50
$1.04
200
$1.01
750
$0.98
2,000
$0.965
5,000+
$0.935
Product Variant Information section