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Manufacturer Part #

IRFU220NPBF

Single N-Channel 200 V 600 mOhm 23 nC 4HEXFET® Power Mosfet - TO-251

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2044
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 600mΩ
Rated Power Dissipation: 43W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5A
Turn-on Delay Time: 6.4ns
Turn-off Delay Time: 20ns
Rise Time: 11ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 6.22mm
Length: 6.73mm
Input Capacitance: 300pF
Package Style:  TO-251 (IPAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.31
USD
Quantity
Web Price
1
$0.305
150
$0.27
500
$0.26
2,000
$0.255
7,500+
$0.245
Product Variant Information section