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Référence fabricant
IRFU220NPBF
Single N-Channel 200 V 600 mOhm 23 nC 4HEXFET® Power Mosfet - TO-251
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :75 par Tube Style d'emballage :TO-251 (IPAK) Méthode de montage :Through Hole | ||||||||||
| Code de date: | 2147 | ||||||||||
Infineon IRFU220NPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Subject: Introduction of an additional wafer production at Infineon Technologies Kulim, Malaysia and change of wafer diameter from 150mm to 200mm for several G5.5 MOSFETReason: The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy.
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFU220NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfu220npbf-infineon-3794435
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFU220NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfu220npbf-infineon-3794435
Infineon IRFU220NPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 600mΩ |
| Rated Power Dissipation: | 43W |
| Qg Gate Charge: | 23nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 5A |
| Turn-on Delay Time: | 6.4ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 11ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 6.22mm |
| Length: | 6.73mm |
| Input Capacitance: | 300pF |
| Style d'emballage : | TO-251 (IPAK) |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
75 par Tube
Style d'emballage :
TO-251 (IPAK)
Méthode de montage :
Through Hole