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Manufacturer Part #

IRFZ34NSTRLPBF

Single N-Channel 55V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFZ34NSTRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.04Ω
Rated Power Dissipation: 3.8W
Qg Gate Charge: 34nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 29A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 31ns
Rise Time: 49ns
Fall Time: 40ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 700pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$396.00
USD
Quantity
Unit Price
800
$0.495
2,400
$0.485
3,200
$0.48
8,000
$0.475
12,000+
$0.465
Product Variant Information section