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Manufacturer Part #

IRL6372TRPBF

Dual N-Channel 30 V 23 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRL6372TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 23mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 11nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 8.1A
Turn-on Delay Time: 5.9ns
Turn-off Delay Time: 34ns
Rise Time: 13ns
Fall Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.1V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 1020pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
4000
Multiple Of:
4000
Total
$1,240.00
USD
Quantity
Unit Price
4,000
$0.31
12,000
$0.305
20,000+
$0.30
Product Variant Information section