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Infineon | ISC027N10NM6ATMA1

Manufacturer Part #

ISC027N10NM6ATMA1

Single N-Channel 100 V 2.7 mOhm 72.5 nC OptiMOS Power Mosfet - PG-TDSON-8 FL

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2421
Product Specification Section
Infineon ISC027N10NM6ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 2.7mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 58nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 23A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 24ns
Rise Time: 4.5ns
Fall Time: 5.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 4300pF
Series: OptiMOS 6
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$8,800.00
USD
Quantity
Unit Price
5,000+
$1.76
Product Variant Information section