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Infineon Technologies | ISC030N10NM6ATMA1

Manufacturer Part #

ISC030N10NM6ATMA1

Single N-Channel 100 V 3 mOhm 69 nC OptiMOS Power Mosfet - PG-TDSON-8 FL

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies ISC030N10NM6ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 3mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 55nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 22.5ns
Rise Time: 4.5ns
Fall Time: 5.3ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 4000pF
Series: OptiMOS 6
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany:
0
On Order:Order inventroy details
20,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
5000
Multiple Of:
5000
Total
$10,900.00
USD
Quantity
Unit Price
5,000+
$2.18
Product Variant Information section