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Infineon | ISP12DP06NMXTSA1

Manufacturer Part #

ISP12DP06NMXTSA1

P-Channel 60 V 2.8 A (Ta) 1.8 W (Ta) SMT Small Signal MOSFET - PG-SOT-223-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon ISP12DP06NMXTSA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 125mΩ
Rated Power Dissipation: 1.8W
Qg Gate Charge: 20.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.8A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 23ns
Rise Time: 9ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 790pF
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$300.00
USD
Quantity
Unit Price
1,000
$0.30
3,000
$0.295
5,000
$0.29
10,000
$0.285
20,000+
$0.28
Product Variant Information section