text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. ISS55EP06LMXTSA1

Infineon | ISS55EP06LMXTSA1

Manufacturer Part #

ISS55EP06LMXTSA1

Transistor MOSFET P-CH 60V 180mA 3-Pin SOT-23 T/R - Tape and Reel

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon ISS55EP06LMXTSA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 5.5Ω
Rated Power Dissipation: 0.4W
Qg Gate Charge: 0.59nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.18A
Turn-on Delay Time: 1ns
Turn-off Delay Time: 4.9ns
Rise Time: 1.4ns
Fall Time: 1.2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.5V
Technology: OptiMOS
Input Capacitance: 18pF
Series: OptiMOS
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
Total
$80.70
USD
Quantity
Unit Price
3,000
$0.0269
9,000
$0.0262
15,000
$0.0259
30,000
$0.0255
60,000+
$0.0248
Product Variant Information section