Manufacturer Part #
IXFH30N50P
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247AD
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| Mfr. Name: | IXYS | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Mounting Method:Through Hole | ||||||||||
| Date Code: | 2229 | ||||||||||
IXYS IXFH30N50P - Product Specification
Shipping Information:
ECCN:
PCN Information:
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
DESCRIPTION OF CHANGE: As a part of Littelfuse endeavors to improve the manufacturing footprint, it has been decided to introduce a new TO-247 backend manufacturing ASEWH in China for the affected part numbers listed below. With this additional capacity to support the upcoming customer demands. Country of origin for TO247 will possibly be Korea, Philippines and China
Product Change Notification for Littelfuse MOSFET DISCRETE, IGBT DISCRETE, Thyristor and Diodes in TO-247 package add new manufacturing location DESCRIPTION OF CHANGE: As a part of Littelfuse endeavors to improve the manufacturing footprint, it has been decided to introduce a new TO-247 backend manufacturing ASEWH in China for the affected part numbers listed attached. With this additional capacity to support the upcoming customer demands. Country of origin for TO247 will possibly be Korea, Philippines and China Form, fit, function changes: No change in the silicon dice used. We would like to notify you on the differences between the existing manufacture and new manufacture.
This is an advisory notice of an upcoming change of the Epoxy Molding Compound (EMC) material used in various discrete power and IC packages. As you maybe aware, Samsung SDI has decided to exit the EMC material business and as a result we are well advanced in qualifying new materials from alternative vendors. In most instances we are using materials that we have already qualified for similar applications and as such we expecting this to be a relatively low risk exercise. As this affects several different technology / package combinations and will result in a number of individual PCNs, we are providing this advanced overview such that we can work with you as far as possible to minimise the impact and disruption to your business of this upcoming change. Appendix to this notice you will find a detailed list of part numbers affected (an electronic copy is available on request). Individual PCNs will follow in the usual manner and we will do our utmost to release these in logical, concise groups. In the first instance, we would kindly ask you to review the information and address any questions and any specific individual needs to your usual Sales Contact.
This is an advisory notice of an upcoming change of the Epoxy Molding Compound (EMC) material used in various discrete power and IC packages. As you maybe aware, Samsung SDI has decided to exit the EMC material business and as a result we are well advanced in qualifying new materials from alternative vendors. In most instances we are using materials that we have already qualified for similar applications and as such we expecting this to be a relatively low risk exercise.
Part Status:
IXYS IXFH30N50P - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 200mΩ |
| Rated Power Dissipation: | 460|W |
| Qg Gate Charge: | 70nC |
| Mounting Method: | Through Hole |
Features & Applications
IXYS is a state of the art leader in MOSFET technology through the IXFH series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers combined with a low resistance factor results in very low power dissipation, in low voltage, and high current power switching applications. This series features wide-ranging operating junction temperatures (–55 degrees C to 150 degrees C) and is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IXYS firmly believes in innovation through its divisional focused approach. This has enabled IXYS to become well diversified in the consumer, military & aerospace, automotive and transportation markets.
Perfect for both commercial and industrial applications, the IXTK120N25P (this part is lead free) has the capacity to operate at 500 V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 0.2 Ohms). Avalanche rated, the IXTK120N25P is able to reduce power dissipation levels to approximately 460 watts. The IXTK120N25P provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-247 package format.
Available Packaging
Package Qty:
30 per Tube
Mounting Method:
Through Hole