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Manufacturer Part #

IXFH96N20P

N-Channel 200 V 24 mOhm Enhancement Mode Power MOSFET - TO-247

ECAD Model:
Mfr. Name: Littelfuse - IXYS
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Littelfuse - IXYS IXFH96N20P - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 600|W
Qg Gate Charge: 145nC
Package Style:  TO-247-3
Mounting Method: Through Hole
Features & Applications

The IXFH96N20P is a 200 V 96 A N-Channel Enhancement Mode Power Mosfet available in TO-247-3 Package.

Features:

  • Fast Intrinsic Diode
  • International standard packages
  • Unclamped Inductive Switching (UIS) rated
  • Low package inductance- easy to drive and to protect

Advantages:

  • Easy to mount
  • Space savings
  • High power density
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
300
Multiple Of:
30
Total
$1,740.00
USD
Quantity
Unit Price
30
$5.89
90
$5.84
300
$5.80
600
$5.77
1,200+
$5.73
Product Variant Information section