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  6. NP90N06VLG-E1-AY

Renesas | NP90N06VLG-E1-AY

Manufacturer Part #

NP90N06VLG-E1-AY

NP90N06VLG Series N-Channel 60 V 7.8 mOhm 90 nC Switching MosFet - TO-252

ECAD Model:
Mfr. Name: Renesas
Standard Pkg:
Product Variant Information section
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Product Specification Section
Renesas NP90N06VLG-E1-AY - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 7.8mΩ
Rated Power Dissipation: 105|W
Qg Gate Charge: 90nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications
The NP90N06VLG-E1-AY is a part of NP90N06VLG series N-Channel switching power MOSFET. It has a storage temperature ranging from -55°C to +175°C and its available in TO-252 package.

This N-channel MOS Field Effect Transistor designed for high current switching applications.

Features:

  • Logic level
  • Built-in gate protection diode
  • Super low on-state resistance
    • RDS(on)1 = 7.8 mO MAX. (VGS = 10 V, ID = 45 A)
    • RDS(on)2 = 12.5 mO MAX. (VGS = 4.5 V, ID = 35 A)
  • High current rating
    • ID(DC) = ±90 A
  • Low input capacitance
    • Ciss = 4600 pF TYP
  • Designed for automotive application and AEC-Q101 qualified

View the NP9 Series of N-Channel Power Mosfets

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,875.00
USD
Quantity
Unit Price
2,500
$1.15
5,000+
$1.14
Product Variant Information section