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onsemi | NTZD3154NT1G

Manufacturer Part #

NTZD3154NT1G

Dual N-Channel 20 V 0.9 Ohm 2.5 nC 250 mW Silicon SMT Mosfet - SOT-563

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2521
Product Specification Section
onsemi NTZD3154NT1G - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.9Ω
Rated Power Dissipation: 250mW
Qg Gate Charge: 2.5nC
Gate-Source Voltage-Max [Vgss]: 7V
Drain Current: 540mA
Turn-on Delay Time: 6ns
Turn-off Delay Time: 16ns
Rise Time: 4ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Si
Height - Max: 0.6mm
Length: 1.7mm
Input Capacitance: 80pF
Package Style:  SOT-563
Mounting Method: Surface Mount
Features & Applications

The NTZD3154NT1G is a part of NTZD3154N series N-channel small signal MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-563-6 package.

Features:

  • Low RDS(on) Improving System Efficiency
  • Low Threshold Voltage
  • Small Footprint 1.6 x 1.6 mm
  • ESD Protected Gate
  • These are Pb-Free Devices

Applications:

  • Load/Power Switches
  • Power Supply Converter Circuits
  • Battery Management
  • Cell Phones, Digital Cameras, PDAs, Pagers, etc.

View the available family of N-channel small signal MOSFET

Pricing Section
Global Stock:
568,000
USA:
568,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
4000
Multiple Of:
4000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$237.20
USD
Quantity
Unit Price
4,000
$0.0593
12,000
$0.0579
20,000
$0.0573
60,000
$0.0559
100,000+
$0.0547
Product Variant Information section