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onsemi | NVMYS025N06CLTWG

Manufacturer Part #

NVMYS025N06CLTWG

Power MOSFET, Single N-Channel, 60 V, 30Ω, 20 A

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2627
Product Specification Section
onsemi NVMYS025N06CLTWG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 27.5mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 5.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8.5A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 14s
Rise Time: 12.5ns
Fall Time: 2.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 330pF
Package Style:  LFPAK-4
Mounting Method: Surface Mount
Pricing Section
Global Stock:
24,000
USA:
24,000
On Order:Order inventroy details
108,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$2,565.00
USD
Quantity
Unit Price
3,000
$0.855
6,000
$0.845
9,000+
$0.835
Product Variant Information section