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Manufacturer Part #

PMBF170,215

PMBF170 Series 60 V 5 Ohm 0.83 W N-Channel Enhancement Mode Transistor - SOT-23

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
Nexperia PMBF170,215 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 830|mW
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 300mA
Turn-on Delay Time: 10ns
Turn-off Delay Time: 15ns
Operating Temp Range: -65°C to +150°C
Gate Source Threshold: 2V
Height - Max: 1mm
Length: 3mm
Input Capacitance: 25pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The PMBF170,215 is a Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features:
 
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for logic level gate drive sources
 
Applications:
 
  • High-speed line drivers
  • Logic level translators
  • Relay drivers
Pricing Section
Global Stock:
15,000
USA:
15,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$158.70
USD
Quantity
Unit Price
3,000
$0.0529
6,000
$0.0521
9,000
$0.0515
15,000
$0.0509
30,000+
$0.0495
Product Variant Information section