Manufacturer Part #
R6030ENX
N-Channel 600 V 0.13 Ohm Flange Mount Power Mosfet - TO-220FP
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| Mfr. Name: | ROHM | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:500 per Bag Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
ROHM R6030ENX - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Wafer Doping/Material Change
10/24/2024 Details and Download
Fabrication site and Material Change
09/30/2022 Details and Download
PowerTransistor_Material change(organic film) and Addition of Shiga Factory for High Voltage MOSFET.Chamge Details: Before:Factory:RohmApollo ChikugoOrganic Film:Polyimide After:Factory:RohmApollo Chikugo and Rohm Shiga FactoryOrganic Film:Polyimide Reason:This transfer will increase production capacity and stabilize production which contribute to BCP, and the organic thin film materials contain an environmental regulation.
Part Status:
Active
Active
ROHM R6030ENX - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 130mΩ |
| Rated Power Dissipation: | 86W |
| Qg Gate Charge: | 85nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 30A |
| Turn-on Delay Time: | 40ns |
| Turn-off Delay Time: | 190ns |
| Rise Time: | 55ns |
| Fall Time: | 60ns |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 2100pF |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
1
$3.29
20
$3.21
75
$3.16
250
$3.12
1,000+
$3.03
Product Variant Information section
Available Packaging
Package Qty:
500 per Bag
Mounting Method:
Through Hole