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Manufacturer Part #

SI2324DS-T1-GE3

Single N-Channel 100 V 0.278 Ohm 5.8 nC 1.25 W Silicon SMT Mosfet - SOT-23

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI2324DS-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.278Ω
Rated Power Dissipation: 1.25W
Qg Gate Charge: 5.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.3A
Turn-on Delay Time: 45ns
Turn-off Delay Time: 26ns
Rise Time: 39ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.8V
Technology: Si
Height - Max: 1.02mm
Length: 3.04mm
Input Capacitance: 190pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
24,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$2,160.00
USD
Quantity
Unit Price
3,000
$0.72
6,000
$0.71
9,000+
$0.70
Product Variant Information section