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Manufacturer Part #

SI2387DS-T1-GE3

MOSFET P-Channel 80V AEC-Q101 Qualified

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI2387DS-T1-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 164mΩ
Rated Power Dissipation: 1.3W
Qg Gate Charge: 6.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.1A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 22ns
Rise Time: 5ns
Fall Time: 13ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Input Capacitance: 395pF
Series: TrenchFET Gen IV
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$3,660.00
USD
Quantity
Unit Price
3,000
$0.62
6,000
$0.61
9,000
$0.605
12,000+
$0.60
Product Variant Information section