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Manufacturer Part #

SI4101DY-T1-GE3

P-Channel 30V 25.7A (Tc) 2.9W (Ta), 6W (Tc) Surface Mount 8-SO

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2515
Product Specification Section
Vishay SI4101DY-T1-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 6mΩ
Rated Power Dissipation: 2.9W
Qg Gate Charge: 135nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 80ns
Rise Time: 9ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Input Capacitance: 8190pF
Series: TrenchFET
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
7,500
USA:
7,500
On Order:
0
Factory Stock:Factory Stock:
10,000
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$775.00
USD
Quantity
Unit Price
2,500
$0.31
5,000
$0.305
10,000
$0.30
12,500+
$0.295
Product Variant Information section