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Manufacturer Part #

SI7111EDN-T1-GE3

P-Channel 30 V 8.55 mOhm 52 W TrenchFET Gen III Mosfet-PowerPAK-1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI7111EDN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 8.55mΩ
Rated Power Dissipation: 4.1W
Qg Gate Charge: 56.5nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 17.4A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 120ns
Rise Time: 40ns
Fall Time: 33ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.6V
Input Capacitance: 5860pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
36 Weeks
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,440.00
USD
Quantity
Unit Price
3,000
$0.24
9,000
$0.235
30,000+
$0.23
Product Variant Information section