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Manufacturer Part #

SI7615CDN-T1-GE3

P-Channel 20 V 9 mOhm 33 W TrenchFET Gen III Mosfet PowerPAK 1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2526
Product Specification Section
Vishay SI7615CDN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 9mΩ
Rated Power Dissipation: 3.6W
Qg Gate Charge: 74nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 16.3A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 60ns
Rise Time: 22ns
Fall Time: 16ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Input Capacitance: 3860pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,340.00
USD
Quantity
Unit Price
3,000
$0.78
6,000
$0.77
9,000+
$0.76
Product Variant Information section