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Manufacturer Part #

SI7949DP-T1-GE3

MOSFET 2P-CH 60V 3.2A PPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI7949DP-T1-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 64mΩ
Rated Power Dissipation: 1.5W
Qg Gate Charge: 26nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.2A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 65ns
Rise Time: 9ns
Fall Time: 30ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Series: TrenchFET
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
42 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$7,950.00
USD
Quantity
Unit Price
3,000+
$2.65
Product Variant Information section