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Vishay | SIDR392DP-T1-GE3

Manufacturer Part #

SIDR392DP-T1-GE3

Single N-Channel 30 V 0.62 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8DC

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
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Product Specification Section
Vishay SIDR392DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.62mΩ
Rated Power Dissipation: 6.25W
Qg Gate Charge: 125nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 82A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 41ns
Rise Time: 23ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Input Capacitance: 9530pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$17,100.00
USD
Quantity
Unit Price
3,000+
$5.70
Product Variant Information section