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Vishay | SIDR570EP-T1-RE3

Manufacturer Part #

SIDR570EP-T1-RE3

SIDR570EP Series 150 V 7.5W SMT N-Channel Power MOSFET - PowerPAK SO-8DC

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
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Product Specification Section
Vishay SIDR570EP-T1-RE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 7.9mΩ
Rated Power Dissipation: 7.5W
Qg Gate Charge: 46nC
Gate-Source Voltage-Max [Vgss]: 4V
Drain Current: 30.8A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 29ns
Rise Time: 74ns
Fall Time: 22ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: TrenchMOS
Input Capacitance: 3740pF
Series: TrenchFET® Gen V
Package Style:  POWERPAK-SO-8L
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
46 Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$35,940.00
USD
Quantity
Unit Price
3,000+
$5.99
Product Variant Information section
Resources, Articles, News & Events
Article Vishay — SiDR570EP N‑Channel 150 V MOSFET, High-Performance & Reliable
2026-05-26
Vishay — SiDR570EP N‑Channel 150 V MOSFE...

The Vishay SiDR570EP N‑Channel 150 V MOSFET delivers low on-resis