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Manufacturer Part #

SIDR610DP-T1-GE3

N-Channel 200 V (D-S) MOSFET PowerPAK SO-8 double cooling 33M dual trench 2mil ,

Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2043
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 31.9mΩ
Rated Power Dissipation: 6.25W
Qg Gate Charge: 25nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8.9A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 20ns
Rise Time: 20ns
Fall Time: 24ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 1380pF
Mounting Method: Surface Mount
Pricing Section
Stock:
3,000
Minimum Order:
3,000
Multiple Of:
3,000
30,000
Factory Stock:Factory Stock:
0
Total
$4,980.00
USD
Quantity
Web Price
3,000+
$1.66
Product Variant Information section