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Vishay | SIHB065N60E-GE3

Manufacturer Part #

SIHB065N60E-GE3

650V,116A,65 mOhm D2PAK

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIHB065N60E-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 65mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 74nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 40A
Turn-on Delay Time: 28ns
Turn-off Delay Time: 54ns
Rise Time: 46ns
Fall Time: 13ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Input Capacitance: 2700pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
1000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$9,500.00
USD
Quantity
Unit Price
1,000+
$9.50
Product Variant Information section