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Vishay | SIHB15N65E-GE3

Manufacturer Part #

SIHB15N65E-GE3

E Series N-Channel 650 V 280 mΩ 34 nC Surface Mount Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIHB15N65E-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 280mΩ
Rated Power Dissipation: 34|W
Qg Gate Charge: 48nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,880.00
USD
Quantity
Unit Price
50
$1.88
2,000
$1.87
3,000
$1.86
4,000+
$1.85
Product Variant Information section