Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
SIHB22N60E-GE3
E-Series N-Channel 600 V 227 W 0.18 Ω 86 nC Surface Mount Power Mosfet - D2PAK
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Vishay SIHB22N60E-GE3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHB22N60E-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/sihb22n60e-ge3-vishay-5061405
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHB22N60E-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/sihb22n60e-ge3-vishay-5061405
Vishay SIHB22N60E-GE3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 180mΩ |
| Rated Power Dissipation: | 227|W |
| Qg Gate Charge: | 57nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
Features:
- Low Figure-of-Merit (FOM) Ron x Qg
- Low Input Capacitance (Ciss)
- Reduced Switching and Conduction Losses
- Ultra Low Gate Charge (Qg)
- Avalanche Energy Rated (UIS)
- Superjunction Technology
Applications:
- Server and Telecom Power Supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction Power Supplies (PFC)
- Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
- Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
View the List of available E-Series Power MOSFETs.
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount