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  6. SIHG30N60E-GE3

Vishay | SIHG30N60E-GE3

Manufacturer Part #

SIHG30N60E-GE3

E-Series N-Channel 600 V 250 W 0.125 Ω 130 nC Flange Mount Power Mosfet-TO-247AC

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIHG30N60E-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 125mΩ
Rated Power Dissipation: 250|W
Qg Gate Charge: 85nC
Package Style:  TO-247AC
Mounting Method: Through Hole
Features & Applications
The SIHG30N60E-GE3 is an E Series Power MOSFET. It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a TO-247AC package.

Features:

  • Low Figure-of-Merit (FOM) Ron x Qg
  • Low Input Capacitance (Ciss)
  • Reduced Switching and Conduction Losses
  • Ultra Low Gate Charge (Qg)
  • Avalanche Energy Rated (UIS)
  • Superjunction Technology

Applications:

  • Server and Telecom Power Supplies
  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction Power Supplies (PFC)
  • Lighting
    • High-Intensity Discharge (HID)
    • Fluorescent Ballast Lighting
  • Industrial
    • Welding
    • Induction Heating
    • Motor Drives
    • Battery Chargers
    • Renewable Energy
    • Solar (PV Inverters)

View the List of available E-Series Power MOSFETs.

Keywords: Superjunction, CoolMos

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
35,000
Factory Lead Time:
12 Weeks
Minimum Order:
500
Multiple Of:
500
Total
$1,690.00
USD
Quantity
Unit Price
500
$3.38
1,000
$3.35
1,500
$3.34
2,000
$3.32
2,500+
$3.29
Product Variant Information section