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Vishay | SIHP12N60E-GE3

Manufacturer Part #

SIHP12N60E-GE3

E-Series N-Channel 600 V 147 W 0.38 Ω 58 nC Flange Mount Power Mosfet - TO-220AB

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
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Product Specification Section
Vishay SIHP12N60E-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 380mΩ
Rated Power Dissipation: 147|W
Qg Gate Charge: 29nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications
The SIHP12N60E-GE3 is an E Series Power MOSFET. It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a TO-220AB package.

Features:

  • Low Figure-of-Merit (FOM) Ron x Qg
  • Low Input Capacitance (Ciss)
  • Reduced Switching and Conduction Losses
  • Ultra Low Gate Charge (Qg)
  • Avalanche Energy Rated (UIS)
  • Superjunction Technology

Applications:

  • Server and Telecom Power Supplies
  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction Power Supplies (PFC)
  • Lighting
    • High-Intensity Discharge (HID)
    • Fluorescent Ballast Lighting
  • Industrial
    • Welding
    • Induction Heating
    • Motor Drives
    • Battery Chargers
    • Renewable Energy
    • Solar (PV Inverters)

View the List of available E-Series Power MOSFETs.

Keywords: Superjunction, CoolMos

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
1000
Multiple Of:
1
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Total
$3,960.00
USD
Quantity
Unit Price
10
$4.23
30
$4.18
100
$4.12
300
$4.06
1,000+
$3.96
Product Variant Information section